MJ11012G
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MJ11012G
| Manufacturer | AMI Semiconductor / ON Semiconductor |
|---|---|
| Description | TRANS NPN DARL 60V 30A TO-3 |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 300mA, 30A |
| Transistor Type | NPN - Darlington |
| Supplier Device Package | TO-204 (TO-3) |
| Series | - |
| Power - Max | 200W |
| Packaging | Tray |
| Package / Case | TO-204AA, TO-3 |
| Other Names | MJ11012G-ND MJ11012GOS |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 2 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Frequency - Transition | 4MHz |
| Detailed Description | Bipolar (BJT) Transistor NPN - Darlington 60V 30A 4MHz 200W Through Hole TO-204 (TO-3) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 20A, 5V |
| Current - Collector Cutoff (Max) | 1mA |
| Current - Collector (Ic) (Max) | 30A |
| RFQ | |
Reference Price(In US Dollars)
- 1 pcs$3.495
- 200 pcs$1.353
- 500 pcs$1.305
- 1000 pcs$1.282
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of MJ11012G
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