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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQD4N50TM_WS

FQD4N50TM_WS

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FQD4N50TM_WS

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionMOSFET N-CH 500V 2.6A DPAK
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package D-Pak
Series QFET®
Rds On (Max) @ Id, Vgs 2.7 Ohm @ 1.3A, 10V
Power Dissipation (Max) 2.5W (Ta), 45W (Tc)
Packaging Tape & Reel (TR)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 500V
Detailed Description N-Channel 500V 2.6A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount D-Pak
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)

FQD4N50, FQU4N50

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