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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDP038AN06A0-F102

FDP038AN06A0-F102

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FDP038AN06A0-F102

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionMOSFET N-CH 60V 80A TO220-3
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220-3
Series -
Rds On (Max) @ Id, Vgs 3.8 mOhm @ 80A, 10V
Power Dissipation (Max) 310W (Tc)
Packaging Tube
Package / Case TO-220-3
Other Names FDP038AN06A0_F102
FDP038AN06A0_F102-ND
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 11 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 6400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 124nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 60V
Detailed Description N-Channel 60V 80A (Tc) 310W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C 80A (Tc)

FDP038AN06A0, FDI038AN06A0

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Reference Price(In US Dollars)

In stock:945
  • 1 pcs$1.959
  • 200 pcs$0.758
  • 500 pcs$0.732
  • 1000 pcs$0.718

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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