FDC636P
FDC636P
Manufacturer | AMI Semiconductor / ON Semiconductor |
---|---|
Description | MOSFET P-CH 20V 2.8A SSOT-6 |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Vgs (Max) | ±8V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | SuperSOT™-6 |
Series | - |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 2.8A, 4.5V |
Power Dissipation (Max) | 1.6W (Ta) |
Packaging | Tape & Reel (TR) |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Other Names | FDC636P-ND FDC636PTR |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 390pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 4.5V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Detailed Description | P-Channel 20V 2.8A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6 |
Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta) |
RFQ |
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