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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > JAN2N1613

JAN2N1613

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JAN2N1613

ManufacturerMicrosemi
DescriptionTRANS NPN 30V 0.5A
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Voltage - Collector Emitter Breakdown (Max) 30V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 15mA, 150mA
Transistor Type NPN
Supplier Device Package TO-39 (TO-205AD)
Series Military, MIL-PRF-19500/181
Power - Max 800mW
Packaging Bulk
Package / Case TO-205AD, TO-39-3 Metal Can
Other Names 1086-16077
1086-16077-MIL
Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Frequency - Transition -
Detailed Description Bipolar (BJT) Transistor NPN 30V 500mA 800mW Through Hole TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 10V
Current - Collector Cutoff (Max) 10µA (ICBO)
Current - Collector (Ic) (Max) 500mA

2N718A,2N1613(L)

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